Reactive ion beam etching system ribe system 反應(yīng)性離子束蝕刻系統(tǒng)
The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed . etching characteristics of materials , including pr , cr , quartz , are investigated . the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy , ion beam density and ion incidence angle in pure ar and chf3 , respectively . the etch rate has shown a square root dependence on variation versus 深入研究了光刻膠、鉻薄膜、石英等光學(xué)材料離子束刻蝕特性,分別以ar氣和chf3為工作氣體,研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量,束流密度和離子入射角度的變化關(guān)系,得到刻蝕速率與影響因素的擬合方程,為掩模的制作工藝路線提供了實(shí)驗(yàn)依據(jù)和理論指導(dǎo)。